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| inchange semiconductor product specification silicon npn power transistors 2SC3212 2SC3212a description ? ? with to-3pfa package ? low collector saturation voltage ?high v cbo ? high speed switching applications ?for high speed switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2SC3212 800 v cbo collector-base voltage 2SC3212a open emitter 900 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 8 v i c collector current 7 a i cm collector current-peak 15 a i b base current 4 a t c =25 ?? 100 p c collector power dissipation t a =25 ?? 3 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SC3212 2SC3212a characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a;l=25mh 500 v v cesat collector-emitter saturation voltage i c =5a ;i b =1a 1.0 v v besat base-emitter saturation voltage i c =5a ;i b =1a 1.5 v 2SC3212 v cb =800v; i e =0 i cbo collector cut-off current 2SC3212a v cb =900v; i e =0 100 | a i ebo emitter cut-off current v eb =5v; i c =0 100 | a h fe-1 dc current gain i c =0.1a ; v ce =5v 15 h fe-2 dc current gain i c =5a ; v ce =5v 8 f t transition frequency i c =0.5a ; v ce =10v;f=1mhz 3.5 mhz switching times 2SC3212 1.0 t on turn-on time 2SC3212a 1.2 | s t stg storage time 2.5 | s 2SC3212 1.0 t f fall time 2SC3212a i c =5a; v cc =200v i b1 =-i b2 =1a 1.2 | s inchange semiconductor product specification 3 silicon npn power transistors 2SC3212 2SC3212a package outline fig.2 outline dimensions (unindicated tolerance: ? 0.30mm) |
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